第三届N型晶硅电池与钝化接触技术论坛将于2018年12月6-7日在江苏常州召开。来自新南威尔士大学（UNSW）的专家将参会并作重要报告，介绍N型硅的效率提升及光衰研究。

新南威尔士大学（UNSW）研究表明，通过选择性杂质工程处理，可以将低质量n-型硅片的开路电压从650 mV提高到730 mV。UNSW将在报告中介绍吸杂和氢钝化的影响效果以及创造低质量低成本硅太阳能电池的潜能。

在已完成的n-型硅异质结电池生产中，UNSW通过提升载流子运输和表面钝化来进一步提升异质结电池效率。UNSW研究表明，他们将异质结电池效率绝对值提升了高达0.7%，这一提高采用了其正在审批的关于SHJ结构的新专利中的流程。此外，该技术还可以将n-PERT太阳能电池的效率绝对值提升0.3%-0.5%。

n-型硅太阳能电池由于不受光衰影响而广受赞誉。然而，UNSW在近期对晶硅材料的热辅助光衰（LeTID）研究中，发现这些杂质也许也会在n-型硅中出现。通过控制烧结条件和扩散发射极层，UNSW找到了在n-型硅中诱导和调整光热衰变缺陷的方法。基于这些方法，他们将在报告中讨论这些发现对于n-型和p-型晶体硅的技术发展意义。

以下为上述文章英文版：

3rd NType c-Si Cell and Passivated Contact Forum 2018 will be held on 6-7 December inChangzhou, Jiangsu, China. Expert from UNSW will introduceUnderstanding n-type Silicon: A demonstration of efficiency enhancement and observations of light induced degradation.

In UNSW’s presentation, they demonstrate an improvement of the implied open-circuit voltage of low-quality n-type silicon wafers from 650mV to 730mV through selective defect engineering process. They demonstrate the impacts of impurity gettering and hydrogen passivation as a potential for low-cost silicon solar cells.

Furthermore, on finished n-type silicon heterojunction devices, they demonstrate an enhancement in efficiency by improving carrier transport and surface passivation. They show up to 0.7% absolute efficiency gain using a new patent pendingprocess on SHJ structures in addition to an absolute efficiency improvement from 0.3% to 0.5% on n-PERT solar cells.

Finally, n-type silicon solar cells have been long praised as a light induced degradation (LID) free materials. However, in light of recent studieson light- and elevated temperature-induced degradation (LeTID) in crystalline silicon materials, UNSW demonstrate that such defect may also manifest in n-type silicon. They demonstrate methods of not only inducing but also modulating the amount of LeTID in n-type silicon through a manipulation of firing conditions and diffused emitter layers. With this, they discuss the implication of such findings on the future of n-type and p-type crystalline silicon technologies.